Onsemi - NTMD6N04R2G

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NTMD6N04R2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMD6N04R2G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
Datasheet NTMD6N04R2G Datasheet
In Stock643
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.6 A
Maximum Pulsed Drain Current (IDM): 29 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .034 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 245 mJ
Other Names: 2156-NTMD6N04R2G-ONTR
ONSONSNTMD6N04R2G
NTMD6N04R2G-ND
NTMD6N04R2GOSTR
NTMD6N04R2GOSCT
NTMD6N04R2GOSDKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 5.8 A
Peak Reflow Temperature (C): NOT SPECIFIED
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