Onsemi - NTMFD016N06CT1G

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NTMFD016N06CT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFD016N06CT1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; No. of Terminals: 8; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet NTMFD016N06CT1G Datasheet
In Stock2,134
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 128 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0163 ohm
Avalanche Energy Rating (EAS): 21 mJ
Maximum Feedback Capacitance (Crss): 5.7 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 32 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
2,134 $0.598 $1,276.132

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