NTMFD1D4N02P1E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFD1D4N02P1E
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Minimum Operating Temperature: -55 Cel; Package Style (Meter): SMALL OUTLINE;
Datasheet	NTMFD1D4N02P1E Datasheet
In Stock	430

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	74 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.0033 ohm
Maximum Feedback Capacitance (Crss):	22 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	25 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
430	$2.380	$1,023.400

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