NTMFD2D4N03P8 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFD2D4N03P8
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 56 A;
Datasheet	NTMFD2D4N03P8 Datasheet
In Stock	2,337

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	26 ns
Maximum Drain Current (ID):	56 A
Maximum Pulsed Drain Current (IDM):	227 A
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	23 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	43 ns
JESD-30 Code:	R-PDSO-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.007 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	54 mJ
Maximum Feedback Capacitance (Crss):	60 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	56 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,337	$0.561	$1,311.057

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