Onsemi - NTMFD6H846NLT1G

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NTMFD6H846NLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFD6H846NLT1G
Description N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
Datasheet NTMFD6H846NLT1G Datasheet
In Stock13,793
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 201 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9.4 A
Maximum Pulsed Drain Current (IDM): 114 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 80 V
Maximum Power Dissipation (Abs): 34 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 31 A
Maximum Drain-Source On Resistance: .19 ohm
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