Onsemi - NTMFS1D7P02P8ZT1G

NTMFS1D7P02P8ZT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS1D7P02P8ZT1G
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Maximum Drain Current (ID): 226 A; Maximum Feedback Capacitance (Crss): 2855 pF;
Datasheet NTMFS1D7P02P8ZT1G Datasheet
In Stock339
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 226 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 5
Maximum Power Dissipation (Abs): 139 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0028 ohm
Maximum Feedback Capacitance (Crss): 2855 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Maximum Drain Current (Abs) (ID): 226 A
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Pricing (USD)

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