NTMFS4833NST3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFS4833NST3G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 86.2 W; Peak Reflow Temperature (C): 260; No. of Terminals: 8;
Datasheet	NTMFS4833NST3G Datasheet
In Stock	1,019

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	16 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	86.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	156 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,019	-	-

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