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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTMFS4854NST1G |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 86.2 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 25 V; |
| Datasheet | NTMFS4854NST1G Datasheet |
| In Stock | 172 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 15.2 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 8 |
| Minimum DS Breakdown Voltage: | 25 V |
| Maximum Power Dissipation (Abs): | 86.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 149 A |
| Moisture Sensitivity Level (MSL): | 1 |
