Onsemi - NTMFS4854NST3G

NTMFS4854NST3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS4854NST3G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 86.2 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
Datasheet NTMFS4854NST3G Datasheet
In Stock1,667
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15.2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 86.2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Maximum Drain Current (Abs) (ID): 149 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,667 $0.899 $1,498.633

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