NTMFS4925NET3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFS4925NET3G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23.2 W; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE;
Datasheet	NTMFS4925NET3G Datasheet
In Stock	1,949

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	16.7 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	5
Minimum DS Breakdown Voltage:	30 V
Maximum Power Dissipation (Abs):	23.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	48 A
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.001 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,949	-	-

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