Onsemi - NTMFS5C612NLT1G

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NTMFS5C612NLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS5C612NLT1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
Datasheet NTMFS5C612NLT1G Datasheet
In Stock2,071
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 451 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Pulsed Drain Current (IDM): 900 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
No. of Terminals: 5
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .0015 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
2,071 $3.330 $6,896.430

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