NTMFS5C646NL3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFS5C646NL3G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 720 A;
Datasheet	NTMFS5C646NL3G Datasheet
In Stock	720

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	89 A
Maximum Pulsed Drain Current (IDM):	720 A
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	66 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0047 ohm
Avalanche Energy Rating (EAS):	185 mJ
Maximum Feedback Capacitance (Crss):	17 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	89 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
720	-	-

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