Onsemi - NTMS3P03R2G

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NTMS3P03R2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMS3P03R2G
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; No. of Terminals: 8; Terminal Finish: Tin (Sn);
Datasheet NTMS3P03R2G Datasheet
In Stock1,269
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.34 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 8
Maximum Power Dissipation (Abs): .73 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .085 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 135 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 3.86 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,269 $0.314 $398.466

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