Onsemi - NTMS4N01R2G

NTMS4N01R2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMS4N01R2G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .77 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 20 V;
Datasheet NTMS4N01R2G Datasheet
In Stock1,473
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 8
Maximum Power Dissipation (Abs): .77 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .04 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 5.9 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,473 $0.249 $366.777

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