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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTND1K5N021ZTAG |
Description | N-CHANNEL; Configuration: SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; JESD-609 Code: e4; Package Style (Meter): CHIP CARRIER; |
Datasheet | NTND1K5N021ZTAG Datasheet |
In Stock | 1,639 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .2 A |
Surface Mount: | YES |
Terminal Finish: | NICKEL PALLADIUM GOLD |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | .125 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-PBCC-N6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 1.5 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 23 V |
Peak Reflow Temperature (C): | 260 |