Onsemi - NTNS1K5N021ZTCG

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NTNS1K5N021ZTCG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTNS1K5N021ZTCG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Drain-Source On Resistance: 1.8 ohm; Maximum Operating Temperature: 150 Cel;
Datasheet NTNS1K5N021ZTCG Datasheet
In Stock1,154
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .22 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): .125 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 1.8 ohm
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