NTS12120EMFST1G by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	NTS12120EMFST1G
Description	RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	NTS12120EMFST1G Datasheet
In Stock	782

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Forward Voltage (VF):	.83 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	12 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
Maximum Reverse Current:	55 uA
No. of Terminals:	5
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	175 Cel
Case Connection:	CATHODE
Moisture Sensitivity Level (MSL):	1
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	120 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Non Repetitive Peak Forward Current:	200 A
Diode Element Material:	SILICON
Additional Features:	FREE WHEELING DIODE, LOW POWER LOSS
Peak Reflow Temperature (C):	260
Application:	EFFICIENCY

Pricing (USD)

Qty.	Unit Price	Ext. Price
782	-	-

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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