NTTFD2D8N03P1E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTTFD2D8N03P1E
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; Avalanche Energy Rating (EAS): 55.4 mJ; No. of Elements: 2;
Datasheet	NTTFD2D8N03P1E Datasheet
In Stock	2,409

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	80 A
Maximum Pulsed Drain Current (IDM):	327 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	8
Maximum Power Dissipation (Abs):	26 W
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-PQCC-N8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.0025 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	55.4 mJ
Other Names:	488-NTTFD2D8N03P1ECT 488-NTTFD2D8N03P1ETR 488-NTTFD2D8N03P1EDKR 2832-NTTFD2D8N03P1ETR
Maximum Feedback Capacitance (Crss):	29 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	80 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,409	$2.160	$5,203.440

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