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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTTFD2D8N03P1E |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; Avalanche Energy Rating (EAS): 55.4 mJ; No. of Elements: 2; |
| Datasheet | NTTFD2D8N03P1E Datasheet |
| In Stock | 2,409 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 80 A |
| Maximum Pulsed Drain Current (IDM): | 327 A |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 26 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | S-PQCC-N8 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Drain-Source On Resistance: | .0025 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 55.4 mJ |
| Maximum Feedback Capacitance (Crss): | 29 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Drain Current (Abs) (ID): | 80 A |
| Peak Reflow Temperature (C): | 260 |
