Onsemi - NTTFS012N10MD

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NTTFS012N10MD by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTTFS012N10MD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 100 V;
Datasheet NTTFS012N10MD Datasheet
In Stock907
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 45 A
Maximum Pulsed Drain Current (IDM): 217 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 62 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0144 ohm
Avalanche Energy Rating (EAS): 121 mJ
Maximum Feedback Capacitance (Crss): 8.4 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Peak Reflow Temperature (C): NOT SPECIFIED
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