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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTTFS4C08NTAG |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25.5 W; Package Style (Meter): SMALL OUTLINE; Maximum Feedback Capacitance (Crss): 39 pF; |
| Datasheet | NTTFS4C08NTAG Datasheet |
| In Stock | 883 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 9.3 A |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 25.5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0059 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
NTTFS4C08NTAGOSDKR NTTFS4C08NTAGOSCT ONSONSNTTFS4C08NTAG 2156-NTTFS4C08NTAG-OS NTTFS4C08NTAGOSTR NTTFS4C08NTAG-ND |
| Maximum Feedback Capacitance (Crss): | 39 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Peak Reflow Temperature (C): | 260 |









