Onsemi - NTTFS5C478NLTAG

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NTTFS5C478NLTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTTFS5C478NLTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Case Connection: DRAIN; Terminal Finish: Matte Tin (Sn) - annealed;
Datasheet NTTFS5C478NLTAG Datasheet
In Stock2,127
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 104 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 8
Maximum Power Dissipation (Abs): 20 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .025 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 43 mJ
Maximum Feedback Capacitance (Crss): 8 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 26 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,127 $2.560 $5,445.120

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