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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTUD3127CT5G |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Finish: NICKEL GOLD PALLADIUM; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | NTUD3127CT5G Datasheet |
In Stock | 1,577 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .16 A |
Surface Mount: | YES |
Terminal Finish: | NICKEL GOLD PALLADIUM |
No. of Terminals: | 6 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 3 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 2.2 pF |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | 260 |