NUP4102XV6T1 by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	NUP4102XV6T1
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	NUP4102XV6T1 Datasheet
In Stock	1,460

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	COMPLEX
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	100 W
Technology:	ZENER
JESD-30 Code:	R-PDSO-F6
Minimum Breakdown Voltage:	14 V
No. of Elements:	8
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Polarity:	BIDIRECTIONAL
Moisture Sensitivity Level (MSL):	1
Maximum Breakdown Voltage:	16 V
Maximum Repetitive Peak Reverse Voltage:	12 V
JESD-609 Code:	e3
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	15 V
Additional Features:	LOW CAPACITANCE
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,460	-	-

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.

BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;