Onsemi - NUS2401SNT1

  1. Home
  2. Onsemi - NUS2401SNT1
NUS2401SNT1 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NUS2401SNT1
Description NPN AND PNP; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A; Additional Features: BUILT IN BIAS RESISTORS;
Datasheet NUS2401SNT1 Datasheet
In Stock1,432
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .2 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 150
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .35 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTORS
Peak Reflow Temperature (C): 235
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,432 $0.195 $279.240

Popular Products

Category Top Products

2N2905A by Taitron Components

2N2905A

Taitron Components

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
JANTX2N2222AUB by New England Semiconductor

JANTX2N2222AUB

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUA by Micropac Industries

JANTX2N2222AUA

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
MMBT3906 by NXP Semiconductors

MMBT3906

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Changzhou Galaxy Century Microelectronics

BC817-25

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
2N3904 by Vishay Semiconductors

2N3904

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;
2N2222AUA by Cobham Plc

2N2222AUA

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 50 V;
MMBT2907A by Yangzhou Yangjie Electronics

MMBT2907A

Yangzhou Yangjie Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum Operating Temperature: -55 Cel;
MMBT2222ALT1G by Onsemi

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
BC847BS,115 by NXP Semiconductors

BC847BS,115

NXP Semiconductors

BC847BS,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements. It has a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V. Ideal for switching applications, this surface-mount transistor operates at up to 150°C and has a peak reflow temperature of 260°C.
2N2219A by New Jersey Semiconductor Products

2N2219A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
2N3906 by ROHM

2N3906

ROHM

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40 by STMicroelectronics

BC817-40

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
JANTX2N2222AUB by Silicon Transistor

JANTX2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Good-ark Electronics

MMBT3906

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 300 ns;
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BC857B,215 by Nexperia

BC857B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC547C by Microsemi

BC547C

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Package Shape: ROUND;
JANTX2N2907AUATR by Microsemi

JANTX2N2907AUATR

Microsemi

Small Signal Bipolar Transistors;