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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NUS5531MTR2G |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 2 A; JESD-609 Code: e3; |
| Datasheet | NUS5531MTR2G Datasheet |
| In Stock | 572 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 2 A |
| Configuration: | SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.4 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 2.1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .05 ohm |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DC Current Gain (hFE): | 150 |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 12 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .18 V |
