Onsemi - NVC040N120SC1

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NVC040N120SC1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVC040N120SC1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 60 A;
Datasheet NVC040N120SC1 Datasheet
In Stock1,288
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 240 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 348 W
Terminal Position: UNSPECIFIED
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .056 ohm
Avalanche Energy Rating (EAS): 613 mJ
Maximum Feedback Capacitance (Crss): 12 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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