Onsemi - NVD5803NT4G

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NVD5803NT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVD5803NT4G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Moisture Sensitivity Level (MSL): 1; Operating Mode: ENHANCEMENT MODE;
Datasheet NVD5803NT4G Datasheet
In Stock188
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 85 A
Maximum Pulsed Drain Current (IDM): 228 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 83 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0057 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 240 mJ
Other Names: NVD5803NT4GOSCT
SVD5803NT4GOSCT-ND
2832-NVD5803NT4GTR
SVD5803NT4GOSCT
NVD5803NT4GOSTR
SVD5803NT4G-ND
NVD5803NT4G-ND
NVD5803NT4GOSDKR
SVD5803NT4GOSDKR
SVD5803NT4G
SVD5803NT4GOSTR-ND
SVD5803NT4GOSDKR-ND
2832-NVD5803NT4G-488
SVD5803NT4GOSTR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 85 A
Peak Reflow Temperature (C): 260
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