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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NVGS5120PT1G |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; No. of Elements: 1; JESD-609 Code: e3; |
| Datasheet | NVGS5120PT1G Datasheet |
| In Stock | 32,780 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NVGS5120PT1GOSCT NVGS5120PT1GOSDKR NVGS5120PT1G-ND NVGS5120PT1GOSTR |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 2.5 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 1.4 W |
| Package Style (Meter): | SMALL OUTLINE |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 2.5 A |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .111 ohm |
| Moisture Sensitivity Level (MSL): | 1 |









