Onsemi - NVH4L022N120M3S

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NVH4L022N120M3S by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVH4L022N120M3S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 352 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
Datasheet NVH4L022N120M3S Datasheet
In Stock2,228
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 68 A
Maximum Pulsed Drain Current (IDM): 246 A
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 4
Maximum Power Dissipation (Abs): 352 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .03 ohm
Avalanche Energy Rating (EAS): 267 mJ
Maximum Feedback Capacitance (Crss): 12 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
2,228 $4.120 $9,179.360

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