NVH4L045N065SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVH4L045N065SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 338 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 65.5 A;
Datasheet	NVH4L045N065SC1 Datasheet
In Stock	1,884

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	65.5 A
Maximum Pulsed Drain Current (IDM):	312 A
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	4
Maximum Power Dissipation (Abs):	338 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Feedback Capacitance (Crss):	13.76 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Maximum Drain Current (Abs) (ID):	65.5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,884	$5.063	$9,538.692

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