Onsemi - NVMFD5C478NLTAG

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NVMFD5C478NLTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMFD5C478NLTAG
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Pulsed Drain Current (IDM): 110 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NVMFD5C478NLTAG Datasheet
In Stock861
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 10.5 A
Maximum Pulsed Drain Current (IDM): 110 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 18 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .025 ohm
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 25 A
Peak Reflow Temperature (C): NOT SPECIFIED
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