Onsemi - NVMFD5C680NLT1G

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NVMFD5C680NLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMFD5C680NLT1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Terminal Position: DUAL; JESD-609 Code: e3;
Datasheet NVMFD5C680NLT1G Datasheet
In Stock2,911
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 7.5 A
Maximum Pulsed Drain Current (IDM): 57 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 8
Maximum Power Dissipation (Abs): 19 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .041 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 47 mJ
Other Names: NVMFD5C680NLT1GOSTR
NVMFD5C680NLT1GOSCT
NVMFD5C680NLT1G-ND
NVMFD5C680NLT1GOSDKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 26 A
Peak Reflow Temperature (C): 260
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