NVMFS6H852NLT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVMFS6H852NLT1G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .017 ohm;
Datasheet	NVMFS6H852NLT1G Datasheet
In Stock	1,299

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	42 A
Maximum Pulsed Drain Current (IDM):	208 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	5
Maximum Power Dissipation (Abs):	54 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.017 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	207 mJ
Maximum Feedback Capacitance (Crss):	6 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	42 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,299	-	-

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