Onsemi - NVMJS1D2N04LCTAG

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NVMJS1D2N04LCTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMJS1D2N04LCTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .00188 ohm; Minimum Operating Temperature: -55 Cel; Maximum Pulsed Drain Current (IDM): 900 A;
Datasheet NVMJS1D2N04LCTAG Datasheet
In Stock625
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 739 mJ
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 100 pF
Maximum Drain Current (ID): 223 A
Maximum Pulsed Drain Current (IDM): 900 A
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): 125 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 223 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .00188 ohm
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