NVMYS005N10MCLT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVMYS005N10MCLT1G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 131 W; No. of Terminals: 4; Minimum DS Breakdown Voltage: 100 V;
Datasheet	NVMYS005N10MCLT1G Datasheet
In Stock	2,045

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	109 A
Maximum Pulsed Drain Current (IDM):	674 A
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	131 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.005 ohm
Maximum Feedback Capacitance (Crss):	21 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	109 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,045	-	-

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