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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NVR5198NLT1G |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 150 Cel; |
| Datasheet | NVR5198NLT1G Datasheet |
| In Stock | 20,061 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NVR5198NLT1GOSTR ONSONSNVR5198NLT1G 2156-NVR5198NLT1G-OS 2832-NVR5198NLT1GTR NVR5198NLT1GOSCT NVR5198NLT1GOSDKR NVR5198NLT1G-ND |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 2.2 A |
| Sub-Category: | FET General Purpose Powers |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 1.5 W |
| Package Style (Meter): | SMALL OUTLINE |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 2.2 A |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .205 ohm |
| Moisture Sensitivity Level (MSL): | 1 |









