Onsemi - NVTFS070N10MCLTAG

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NVTFS070N10MCLTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVTFS070N10MCLTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Terminal Form: FLAT; Maximum Operating Temperature: 175 Cel;
Datasheet NVTFS070N10MCLTAG Datasheet
In Stock1,905
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 47 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
Avalanche Energy Rating (EAS): 423 mJ
Maximum Feedback Capacitance (Crss): 1.9 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
1,905 $0.870 $1,657.350

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