Onsemi - NVTFS5C658NLTAG

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NVTFS5C658NLTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVTFS5C658NLTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
Datasheet NVTFS5C658NLTAG Datasheet
In Stock864
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 440 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .073 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 142 mJ
Other Names: NVTFS5C658NLTAGOSCT
NVTFS5C658NLTAGOSTR
2832-NVTFS5C658NLTAG
NVTFS5C658NLTAGOSDKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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