Onsemi - NXH010P120MNF1PTNG

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NXH010P120MNF1PTNG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH010P120MNF1PTNG
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NXH010P120MNF1PTNG Datasheet
In Stock247
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 114 A
Maximum Pulsed Drain Current (IDM): 342 A
Surface Mount: NO
No. of Terminals: 18
Maximum Power Dissipation (Abs): 250 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X18
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .014 ohm
Other Names: 488-NXH010P120MNF1PTNG
5556-NXH010P120MNF1PTNG
488-NXH010P120MNF1PTNG-ND
Maximum Feedback Capacitance (Crss): 39 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 1200 V
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Pricing (USD)

Qty. Unit Price Ext. Price
247 $100.570 $24,840.790

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