Onsemi - NXH040P120MNF1PG

NXH040P120MNF1PG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH040P120MNF1PG
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 74 W; Maximum Drain Current (ID): 30 A; Case Connection: ISOLATED;
Datasheet NXH040P120MNF1PG Datasheet
In Stock1,025
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 12 pF
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 74 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 18
Minimum DS Breakdown Voltage: 1200 V
Maximum Power Dissipation (Abs): 74 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X18
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .056 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
1,025 $89.150 $91,378.750

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