NXH80B120H2Q0SNGQ0BOOST by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH80B120H2Q0SNGQ0BOOST
Description	N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Transistor Element Material: SILICON;
Datasheet	NXH80B120H2Q0SNGQ0BOOST Datasheet
In Stock	107

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Collector Current (IC):	41 A
Configuration:	COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	299 ns
No. of Terminals:	22
Maximum Power Dissipation (Abs):	103 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	47 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-MUFM-X22
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
107	-	-

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Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;