NYC008-6JG by Onsemi | Triggering Devices

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Manufacturer	Onsemi
Manufacturer's Part Number	NYC008-6JG
Description	SCR; Package Style (Meter): CYLINDRICAL; Surface Mount: NO; Terminal Position: BOTTOM; Configuration: SINGLE; Repetitive Peak Off-state Voltage: 600 V;
Datasheet	NYC008-6JG Datasheet
In Stock	283

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Trigger Device Type:	SCR
Configuration:	SINGLE
Maximum RMS On-state Current:	.8 A
JEDEC-95 Code:	TO-266AA
Repetitive Peak Reverse Voltage:	600 V
Surface Mount:	NO
Terminal Finish:	TIN SILVER COPPER
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Maximum DC Gate Trigger Current:	.2 mA
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	110 Cel
Repetitive Peak Off-state Voltage:	600 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
283	$0.189	$53.487

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;