Onsemi - RA101C

  1. Home
  2. Onsemi - RA101C
RA101C by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number RA101C
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50;
Datasheet RA101C Datasheet
In Stock1,472
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .2 W
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,472 - -

Popular Products

Category Top Products

MMBT3904WT1G by Onsemi

MMBT3904WT1G

Onsemi

MMBT3904WT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for amplifier applications, it has a small outline package and operates b/w -55°C to 150°C. With a DC current gain of at least 30, this transistor offers fast switching times for efficient performance.
BC847C by Forward International Electronics

BC847C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
ULN2003ADR by Texas Instruments

ULN2003ADR

Texas Instruments

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
MMBT2907A by General Semiconductor

MMBT2907A

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N3906 by Microsemi

2N3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847C by Siemens

BC847C

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
FMMT493TA by Zetex Plc

FMMT493TA

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 100 V;
BC847C by Fairchild Semiconductor

BC847C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847B by Itt Semiconductor

BC847B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3904 by General Semiconductor

2N3904

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847C by STMicroelectronics

BC847C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2219A by New Jersey Semiconductor Products

2N2219A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
2N3906 by Texas Instruments

2N3906

Texas Instruments

2N3906 by Texas Instruments is a PNP BJT transistor with hFE of 80. It has a max IC of 0.2A and VCE of 40V, ideal for switching applications. With a max power dissipation of 0.35W and fT of 250MHz, it operates at up to 150°C, making it suitable for various electronic circuits.
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Continental Device India

BC817-25

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT2907A by Microsemi

MMBT2907A

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
JANTX2N2222AUA/TR by Microchip Technology

JANTX2N2222AUA/TR

Microchip Technology

JANTX2N2222AUA/TR by Microchip is a NPN BJT transistor with hFE of 30, Vce of 50V, and Ic of 0.8A. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. It comes in a small outline package suitable for surface mount technology.
BC847C by Promax-johnton

BC847C

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; JESD-609 Code: e0;
2N2907AUB by Tt Electronics Plc

2N2907AUB

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: .5 W; Package Body Material: UNSPECIFIED;
ULN2003ADRE4 by Texas Instruments

ULN2003ADRE4

Texas Instruments

ULN2003ADRE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications, this surface-mount transistor features a Gull Wing terminal form in a small outline package style.