Onsemi - RC106C

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Transistor Application: AMPLIFIER;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;

SBC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.38W, hFE of 420, and Vce of 45V. With a package style of small outline and surface mount capability, it operates b/w -55 to 150°C.

MMBT2222AM3T5G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with matte tin finish and operates up to 150°C.

BC547ATA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.1A, ideal for switching applications. With a min DC current gain of 110 and max power dissipation of 0.625W, it operates at up to 150°C making it suitable for various electronic circuits in different industries. The package style is cylindrical with matte tin finish and through-hole terminals.

BC807-25LT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 160, and IC of 0.5A. Ideal for switching applications, it operates b/w -55 to 150 °C and has a max VCE of 45V. With a small outline package style and surface mount capability, it offers high performance in compact designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-236AB;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

BC847BVN-7 by Diodes Inc. is a small signal BJT with NPN and PNP polarity, featuring separate 2-element configuration. With a max power dissipation of 0.15W, it operates at up to 150°C and has a max collector-emitter voltage of 45V. Ideal for applications requiring high DC current gain and transition frequency up to 300MHz in compact designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;