Onsemi - SBC856BLT1

  1. Home
  2. Onsemi - SBC856BLT1
SBC856BLT1 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SBC856BLT1
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
Datasheet SBC856BLT1 Datasheet
In Stock1,160
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 220
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Peak Reflow Temperature (C): 235
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,160 - -

Popular Products

Category Top Products

SMMBT4403LT1G by Onsemi

SMMBT4403LT1G

Onsemi

SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.
2N2219A by Microchip Technology

2N2219A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
MMBT2907A by National Semiconductor

MMBT2907A

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .8 A;
2N2222A by Swampscott Electronics

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222A by Vpt Components

JANTX2N2222A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Package Body Material: METAL;
MMBT2222A by Nte Electronics

MMBT2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
MMBT3906,215 by NXP Semiconductors

MMBT3906,215

NXP Semiconductors

NXP Semiconductors' MMBT3906,215 is a PNP BJT transistor with 3 terminals and max. power dissipation of 0.25W. Ideal for switching applications, it has a min. DC current gain of 30 and max. collector-emitter voltage of 40V. Operating temp ranges from -65 to 150°C, with peak reflow temp at 260°C and transition frequency at 250MHz.
BC547C by National Semiconductor

BC547C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3904TA by Rochester Electronics

2N3904TA

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
BC846B by Diotec Semiconductor Ag

BC846B

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2222A by Semitronics

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222A by Microsemi

MMBT2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
MMBT3906 by Vishay Semiconductors

MMBT3906

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
BC846BDW1T1G by Onsemi

BC846BDW1T1G

Onsemi

BC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, DC current gain of 200, and operates up to 150°C. This small outline transistor in gull wing package offers high performance in compact designs.
ZTX653 by Zetex Plc

ZTX653

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
2N3906 by Diotec Semiconductor Ag

2N3906

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
PMBT2369,215 by Nexperia

PMBT2369,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Peak Reflow Temperature (C): 260;
BC547B by Itt Semiconductor

BC547B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Multicomp Pro

BC817-25

Multicomp Pro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Minimum Operating Temperature: -65 Cel;
BC807-40W,115 by Nexperia

BC807-40W,115

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;