Onsemi - SDL3034

  1. Home
  2. Onsemi - SDL3034
SDL3034 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SDL3034
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; Peak Wavelength (nm): 780; JESD-609 Code: e0;
Datasheet SDL3034 Datasheet
In Stock2,460
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 780
Semiconductor Material: GaAlAs
Sub-Category: Laser Diodes
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,460 - -

Popular Products

Category Top Products

HL6344G by Renesas Electronics

HL6344G

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .045 A; Maximum Threshold Current: 30 mA; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Forward Voltage: 2.7 V;
SPLCG98 by Infineon Technologies

SPLCG98

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Size: 4.5 mm; No. of Functions: 1; Minimum Operating Temperature: -10 Cel; Maximum Threshold Current: 550 mA;
NX8570SC437-BA-A by Renesas Electronics

NX8570SC437-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1543; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
HL1511AF by Renesas Electronics

HL1511AF

Renesas Electronics

LASER DIODE; Nominal Output Power: 1 W; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 35 Cel; Maximum Threshold Current: 25 mA; Shape: RECTANGULAR;
NX8562LB405 by Renesas Electronics

NX8562LB405

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V;
NX8570SC883D-BA-A by Renesas Electronics

NX8570SC883D-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1588; Semiconductor Material: InGaAsP;
CQF23/D52 by NXP Semiconductors

CQF23/D52

NXP Semiconductors

CQF23/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
SDL9952-001 by Onsemi

SDL9952-001

Onsemi

SDL9952-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
TOLD9442M by Toshiba

TOLD9442M

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaInP; Maximum Forward Current: .06 A; Peak Wavelength (nm): 650; Maximum Forward Voltage: 3 V;
SPLCG98-0 by Infineon Technologies

SPLCG98-0

Infineon Technologies

LASER DIODE; No. of Functions: 1; Size: .1 mm; Peak Wavelength (nm): 975; Configuration: SINGLE; Maximum Operating Temperature: 60 Cel;
DL-3147-085 by Onsemi

DL-3147-085

Onsemi

DL-3147-085 by Onsemi is a LASER DIODE with Peak Wavelength of 650nm, Max Forward Current of 0.05A, and Max Forward Voltage of 2.6V. It operates b/w -10 °C to 80°C and is mounted through hole. Ideal for applications requiring precise laser emission in various industries.
SPLBS94 by Infineon Technologies

SPLBS94

Infineon Technologies

LASER DIODE; Semiconductor Material: InGaAs/GaAs; Spectral Bandwidth: 4 m; Peak Wavelength (nm): 940;
NX8566LE878-BC by Renesas Electronics

NX8566LE878-BC

Renesas Electronics

Laser Diodes;
TOLD123R by Toshiba

TOLD123R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .08 A;
NX8570SC473D-BA-AZ by Renesas Electronics

NX8570SC473D-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1547; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
TOLD300E by Toshiba

TOLD300E

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000003 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
NX8570SC803-BA by Renesas Electronics

NX8570SC803-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1580; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel;
SDL4032-201 by Onsemi

SDL4032-201

Onsemi

SDL4032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
OD8303D by Renesas Electronics

OD8303D

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Spectral Bandwidth: 1 m; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel;
NX8570SC497-BA-A by Renesas Electronics

NX8570SC497-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1549; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V;