Onsemi - SDL4038-011

  1. Home
  2. Onsemi - SDL4038-011
SDL4038-011 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SDL4038-011
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 645; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 40 Cel; Semiconductor Material: AlGaInP;
Datasheet SDL4038-011 Datasheet
In Stock1,478
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 645
Maximum Operating Temperature: 40 Cel
Semiconductor Material: AlGaInP
Sub-Category: Laser Diodes
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,478 - -

Popular Products

Category Top Products

NX8570SC6053D-BA-AZ by Renesas Electronics

NX8570SC6053D-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8562LB541-CA by Renesas Electronics

NX8562LB541-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1554; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
DL-4038-226 by Onsemi

DL-4038-226

Onsemi

DL-4038-226 by Onsemi is a Laser Diode with 0.085A max forward current, peak wavelength of 635nm, and 2.6V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 40°C with through hole mounting feature.
NX8570SC6053-BA-AZ by Renesas Electronics

NX8570SC6053-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1605;
TOLD9201(S) by Toshiba

TOLD9201(S)

Toshiba

LASER DIODE; Nominal Output Power: 5 W; No. of Functions: 1; Peak Wavelength (nm): 670;
SDL-LS30 by Onsemi

SDL-LS30

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 685;
CQF25C/D13 by NXP Semiconductors

CQF25C/D13

NXP Semiconductors

CQF25C/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
DL-3180-121 by Onsemi

DL-3180-121

Onsemi

DL-3180-121 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.045A and max forward voltage of 2.3V. Ideal for applications requiring precise laser emission in temperature range -10 to 60 °C, featuring through hole mounting.
NX8567SAM354-CC by Renesas Electronics

NX8567SAM354-CC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V;
SDL3144-211 by Onsemi

SDL3144-211

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
NX8567SAS557-CC by Renesas Electronics

NX8567SAS557-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel;
NX8570SC984-BA by Renesas Electronics

NX8570SC984-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
NX8571SA477-CA by Renesas Electronics

NX8571SA477-CA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1548; Maximum Forward Voltage: 2.5 V;
CQF25B/D43 by NXP Semiconductors

CQF25B/D43

NXP Semiconductors

CQF25B/D43 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
STH61008Z by Infineon Technologies

STH61008Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1300; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 1.5 V;
STH91008G by Infineon Technologies

STH91008G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A;
NDL7740PA by Renesas Electronics

NDL7740PA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;
NX8564LE887-CC by Renesas Electronics

NX8564LE887-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
NX8565LE853-CC by Renesas Electronics

NX8565LE853-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Semiconductor Material: GaAs; Maximum Forward Voltage: 2 V; Maximum Forward Current: .1 A;
NX8570SA517-CA by Renesas Electronics

NX8570SA517-CA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1552; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;