Onsemi - SDTC114EET1G

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SDTC114EET1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number SDTC114EET1G
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet SDTC114EET1G Datasheet
In Stock32,281
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 35
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 1
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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