Onsemi - SMMUN2134LT1G

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SMMUN2134LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number SMMUN2134LT1G
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; Transistor Element Material: SILICON;
Datasheet SMMUN2134LT1G Datasheet
In Stock370
NAME DESCRIPTION
Other Names: 2832-SMMUN2134LT1G
SMMUN2134LT1G-ND
2156-SMMUN2134LT1G-OS
SMMUN2134LT1GOSDKR
SMMUN2134LT1GOSCT
SMMUN2134LT1GOSTR
ONSONSSMMUN2134LT1G
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signals
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .4 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
370 $0.025 $9.250

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