Onsemi - STD18N06LT4G-VF01

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STD18N06LT4G-VF01 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number STD18N06LT4G-VF01
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Drain-Source On Resistance: .065 ohm; JESD-609 Code: e3;
Datasheet STD18N06LT4G-VF01 Datasheet
In Stock1,459
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 180 ns
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 54 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 2
Maximum Power Dissipation (Abs): 55 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 120 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 55 W
Maximum Drain-Source On Resistance: .065 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 72 mJ
Maximum Feedback Capacitance (Crss): 80 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 18 A
Peak Reflow Temperature (C): 260
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